Optimization of InGaAs/InGaAsP MQW mqw semiconductor amplifiers
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Trends in semiconductor laser design:
The trade-off between the effect of leakage suppression and the increase of related optical loss due to placement of the p-doping in 1.3-1.55μm InGaAsP MQW edgeemitting lasers is detailed. The effect of the Zn doping profile on laser characteristics is illustrated by experimental results obtained for telecom lasers and high power lasers. The design approach combining broadened waveguides with p...
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تاریخ انتشار 2017